Performance comparison of gasb, strained-si, and ingaas double-gate ultrathin-body n-FETs

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1686-1688

  Luisier, Mathieu ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Electron phonon scattering; Full band device simulation; Lvalley engineering; Ultrathin body (UTB) transistor

Indexed keywords

ATOMISTIC APPROACH; BALLISTIC LIMIT; DENSITY OF STATE; DOUBLE-GATE; EFFECTIVE MASS; ELECTRON PHONON SCATTERING; EQUIVALENT OXIDE THICKNESS; FULL BAND; GAMMA POINT; HIGH ELECTRON VELOCITY; L-VALLEY; NEAREST-NEIGHBORS; NONEQUILIBRIUM GREEN FUNCTION FORMALISMS; OFF-CURRENT; ON-CURRENTS; PERFORMANCE COMPARISON; STRAINED-SI; SUB-BANDS; TIGHT BINDING MODEL; ULTRA-THIN-BODY;

BALLISTICS; COMPUTER SIMULATION; ELECTRON DIFFRACTION; ELECTRON SCATTERING; ELECTRON-PHONON INTERACTIONS; GALLIUM; GALLIUM ALLOYS; INDIUM; MESFET DEVICES; PHONON SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ELECTRONS;

EID: 81855225293     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2168377     Document Type: Article

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