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Volumn 5, Issue 7, 2012, Pages

Characterization of Ni-GaSb alloys formed by direct reaction of Ni with GaSb

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT REACTIONS; FORMATION PROCESS; LOW RESISTIVITY; METAL SOURCE/DRAIN; OXIDE SEMICONDUCTOR; P-MOSFETS; SCHOTTKY BARRIER HEIGHTS; SELF-ALIGNED;

EID: 84863763211     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.071201     Document Type: Article
Times cited : (24)

References (20)
  • 12
    • 84863767604 scopus 로고
    • Japan Patent 587 527
    • Y. Nishi: Japan Patent 587 527 (1970).
    • (1970)
    • Nishi, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.