-
1
-
-
34047272089
-
-
S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, and S. Sugahara: Solid-State Electron. 51 (2007) 526.
-
(2007)
Solid-state Electron.
, vol.51
, pp. 526
-
-
Takagi, S.1
Tezuka, T.2
Irisawa, T.3
Nakaharai, S.4
Numata, T.5
Usuda, K.6
Sugiyama, N.7
Shichijo, M.8
Nakane, R.9
Sugahara, S.10
-
2
-
-
36549081349
-
-
R. J. W. Hill, D. A. J. Moran, X. Li, H. P. Zhou, D. Macintyre, S. Thoms, A. Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack, and I. G. Thayne: IEEE Electron Device Lett. 28 (2007) 1080.
-
(2007)
IEEE Electron Device Lett.
, vol.28
, pp. 1080
-
-
Hill, R.J.W.1
Moran, D.A.J.2
Li, X.3
Zhou, H.P.4
Macintyre, D.5
Thoms, S.6
Asenov, A.7
Zurcher, P.8
Rajagopalan, K.9
Abrokwah, J.10
Droopad, R.11
Passlack, M.12
Thayne, I.G.13
-
4
-
-
79959784975
-
-
A. Nainani, T. Irisawa, Z. Yuan, Y. Sun, T. Krishnamohan, M. Reason, B. R. Bennett, J. B. Boos, M. G. Ancona, Y. Nishi, and K. C. Saraswat: IEDM Tech. Dig., 2010, p. 138.
-
(2010)
IEDM Tech. Dig.
, pp. 138
-
-
Nainani, A.1
Irisawa, T.2
Yuan, Z.3
Sun, Y.4
Krishnamohan, T.5
Reason, M.6
Bennett, B.R.7
Boos, J.B.8
Ancona, M.G.9
Nishi, Y.10
Saraswat, K.C.11
-
5
-
-
80053210353
-
-
A. Nainani, T. Irisawa, Z. Yuan, B. R. Bennett, J. B. Boos, Y. Nishi, and K. C. Saraswat: IEEE Trans. Electron Devices 58 (2011) 3407.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, pp. 3407
-
-
Nainani, A.1
Irisawa, T.2
Yuan, Z.3
Bennett, B.R.4
Boos, J.B.5
Nishi, Y.6
Saraswat, K.C.7
-
6
-
-
84863763405
-
-
Z. Yuan, A. Nainani, B. R. Bennett, J. Brad Boos, M. G. Ancona, and K. C. Saraswat: Proc. Int. Semiconductor Device Research Symp., 2011, p. 383.
-
(2011)
Proc. Int. Semiconductor Device Research Symp.
, pp. 383
-
-
Yuan, Z.1
Nainani, A.2
Bennett, B.R.3
Boos, J.B.4
Ancona, M.G.5
Saraswat, K.C.6
-
7
-
-
79951485042
-
-
Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi: Jpn. J. Appl. Phys. 50 (2011) 010109.
-
(2011)
Jpn. J. Appl. Phys.
, vol.50
, pp. 010109
-
-
Nakakita, Y.1
Nakakne, R.2
Sasada, T.3
Takenaka, M.4
Takagi, S.5
-
12
-
-
84863767604
-
-
Japan Patent 587 527
-
Y. Nishi: Japan Patent 587 527 (1970).
-
(1970)
-
-
Nishi, Y.1
-
13
-
-
0035691719
-
-
P. S. Lee, K. L. Pey, D. Mangelinck, J. Ding, D. Z. Chi, and L. Chan: IEEE Electron Device Lett. 22 (2001) 568.
-
(2001)
IEEE Electron Device Lett.
, vol.22
, pp. 568
-
-
Lee, P.S.1
Pey, K.L.2
Mangelinck, D.3
Ding, J.4
Chi, D.Z.5
Chan, L.6
-
14
-
-
81055154934
-
-
S.-H. Kim, M. Yokoyama, N. Taoka, R. Iida, S.-H. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi: Appl. Phys. Express 4 (2011) 114201.
-
(2011)
Appl. Phys. Express
, vol.4
, pp. 114201
-
-
Kim, S.-H.1
Yokoyama, M.2
Taoka, N.3
Iida, R.4
Lee, S.-H.5
Nakane, R.6
Urabe, Y.7
Miyata, N.8
Yasuda, T.9
Yamada, H.10
Fukuhara, N.11
Hata, M.12
Takenaka, M.13
Takagi, S.14
-
15
-
-
79960601065
-
-
S.-H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi: Appl. Phys. Lett. 98 (2011) 243501.
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 243501
-
-
Kim, S.-H.1
Yokoyama, M.2
Taoka, N.3
Iida, R.4
Lee, S.5
Nakane, R.6
Urabe, Y.7
Miyata, N.8
Yasuda, T.9
Yamada, H.10
Fukuhara, N.11
Hata, M.12
Takenaka, M.13
Takagi, S.14
-
16
-
-
54249109508
-
-
H. Toyota, T. Sasaki, S. Nakamura, Y. Jinbo, and N. Uchitomi: Jpn. J. Appl. Phys. 47 (2008) 580.
-
(2008)
Jpn. J. Appl. Phys.
, vol.47
, pp. 580
-
-
Toyota, H.1
Sasaki, T.2
Nakamura, S.3
Jinbo, Y.4
Uchitomi, N.5
-
17
-
-
0006084837
-
-
A. Guivarc'h, J. Caulet, M. Minier, M. C. Le Clanche, S. Deputier, and R. Guérin: J. Appl. Phys. 75 (1994) 5061.
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 5061
-
-
Guivarc'h, A.1
Caulet, J.2
Minier, M.3
Le Clanche, M.C.4
Deputier, S.5
Guérin, R.6
|