Inverted-type InGaAs metal-oxide-semiconductor high-electron-mobility transistor on Si substrate with maximum drain current exceeding 2A/mm

Applied Physics Express

Volumn 5, Issue 10, 2012, Pages

  Zhou, Xiuju ^a   Li, Qiang ^a   Tang, Chak Wah ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; EFFECTIVE MOBILITIES; GATE RECESS ETCHING; HIGH QUALITY; MAXIMUM DRAIN CURRENT; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; ON-RESISTANCE; PARASITIC RESISTANCES; SI SUBSTRATES; SOURCE/DRAIN REGIONS;

DIELECTRIC DEVICES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GATE DIELECTRICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; SEMICONDUCTING INDIUM; SILICON; VAPORS;

SEMICONDUCTING SILICON;

EID: 84868158164     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.104201     Document Type: Article

References (21)

1. J. A. del Alamo et al.: Proc. 23rd Int. Conf. Indium Phosphide and Related Materials, 2011, p. 1.
2. ITRS: 2010 [http://www.itrs.net/Links/2010ITRS/Home2010.htm].
3. M. K. Hudait et al.: IEDM Tech. Dig., 2007, p. 625.
4. M. Radosavljevic et al.: IEDM Tech. Dig., 2009, p. 1.
5. K. M. Lau et al.: IEDM Tech. Dig., 2008, p. 1.
6. N. Mukherjee et al.: IEDM Tech. Dig., 2011, p. 35.1.1.
7. H. Tsuchiya et al.: IEEE Electron Device Lett. 31 (2010) 365.
8. M. V. Fischetti et al.: IEDM Tech. Dig., 2007, p. 109.
9. T. Penna et al.: J. Appl. Phys. 57 (1985) 351.
10. A. P. Kirk et al.: Appl. Phys. Lett. 96 (2010) 202905.
11. M. Milojevic et al.: Appl. Phys. Lett. 93 (2008) 252905.
12. H. D. Trinh et al.: Appl. Phys. Lett. 97 (2010) 042903.
13. H. D. Trinh et al.: IEEE Electron Device Lett. 32 (2011) 752.
14. Y. Q. Wu et al.: IEDM Tech. Dig., 2009, p. 1.
15. P. Chang et al.: Appl. Phys. Express 4 (2011) 114202.
16. U. Singisetti et al.: IEEE Electron Device Lett. 30 (2009) 1128.
17. R. Terao et al.: Appl. Phys. Express 4 (2011) 054201.
18. Y. Yonai et al.: IEDM Tech. Dig., 2011, p. 13.3.1.
19. M. Egard et al.: IEDM Tech. Dig., 2011, p. 13.2.1.
20. A. D. Carter et al.: Proc. 69th IEEE Device Research Conf., 2011, p. 19.
21. S. J. Bentley et al.: IEEE Electron Device Lett. 32 (2011) 494.