Effects of surface orientation on the performance of idealized IIIV thin-body ballistic n-MOSFETs

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 746-748

  Kim, Raseong ^a   Rakshit, Titash ^b   Kotlyar, Roza ^b   Hasan, Sayed ^b   Weber, Cory E ^b  

^a Purdue University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Band structure; IIIV; injection velocity; metaloxidesemiconductor field effect transistors (MOSFETs); tight binding (TB); ultrathin body (UTB)

Indexed keywords

BALLISTIC LIMIT; BALLISTIC PERFORMANCE; BAND STRUCTURE CALCULATION; DENSITY-OF-STATES; GAAS; GAAS(1 0 0); HIGH INJECTION; IDEALIZATION ASSUMPTIONS; IIIV; INAS; INJECTION VELOCITY; N-CHANNEL; NMOSFETS; ON-CURRENTS; OXIDE CAPACITANCE; SIMULATION RESULT; SIMULATION STUDIES; SURFACE ORIENTATION; THICKNESS VALUE; THIN BODY; TIGHT BINDING; TRANSPORT DIRECTION; ULTRATHIN BODY (UTB);

BALLISTICS; BAND STRUCTURE; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACES; TRANSISTORS;

MOSFET DEVICES;

EID: 79957610687     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2127440     Document Type: Article

References (16)

1. G. Dewey, M. K. Hudait, L. Kangho, R. Pillarisetty, W. Rachmady, M. Radosavljevic, T. Rakshit, and R. Chau, "Carrier transport in high-mobility III-V quantum-well transistors and performance impact for highspeed low-power logic applications," IEEE Electron Device Lett., vol. 29, no. 10, pp. 1094-1097, Oct. 2008.
2. 0.3As HEMTs for post-Si-CMOS logic applications," IEEE Trans. Electron Devices, vol. 55, no. 10, pp. 2546-2553, Oct. 2008.
3. A. Rahman, G. Klimeck, and M. Lundstrom, "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects," in IEDM Tech. Dig., 2005, pp. 601-604. (Pubitemid 46370923)
4. K. D. Cantley, Y. Liu, H. S. Pal, T. Low, S. S. Ahmed, and M. S. Lundstrom, "Performance analysis of III-V materials in a double-gate nano-MOSFET," in IEDM Tech. Dig., 2007, pp. 113-116.
5. Y. Liu, N. Neophytou, G. Klimeck, and M. S. Lundstrom, "Band-structure effects on the performance of III-V ultrathin-body SOI MOSFETs," IEEE Trans. Electron Devices, vol. 55, no. 5, pp. 1116-1122, May 2008. (Pubitemid 351689503)
6. T. Krishnamohan, D. Kim, and K. C. Saraswat, "Properties and TradeOffs of Compound Semiconductor MOSFETs," in Fundamentals of III-V Semiconductor MOSFETs. New York: Springer-Verlag, 2010, pp. 7-27.
7. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, no. 11, pp. 5815-5875, Jun. 2001. (Pubitemid 33599303)
8. P. M. Solomon and S. E. Laux, "The ballistic FET: Design, capacitance and speed limit," in IEDM Tech. Dig., 2001, pp. 95-98. (Pubitemid 34166692)
9. M. Rodwell, W. Frensley, S. Steiger, E. Chagarov, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, J. Law, T. Boykin, G. Klimek, P. Asbeck, A. Kummel, and J. N. Schulman, "III-V FET channel designs for high current densities and thin inversion layers," in Proc. DRC, 2010, pp. 149-152.
10. ? tight-binding calculation for cubic semiconductors: General method and material parameters," Phys. Rev. B, Condens. Matter, vol. 57, no. 11, pp. 6493-6507, 1998. (Pubitemid 128486252)
11. T. B. Boykin, G. Klimeck, R. C. Bowen, and F. Oyafuso, "Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory," Phys. Rev. B, Condens. Matter, vol. 66, no. 12, p. 125 207, Sep. 2002.
12. A. Paul, M. Luisier, N. Neophytou, R. Kim, J. Geng, M. McLennan, M. Lundstrom, and G. Klimeck, Band Structure Lab, 2006.
13. [Online]. Available: https://nanohub.org/tools/bandstrlab.
14. N. Neophytou, T. Rakshit, and M. S. Lundstrom, "Performance analysis of 60-nm gate-length III-V InGaAs HEMTs: Simulations versus experiments," IEEE Trans. Electron Devices, vol. 56, no. 7, pp. 1377-1387, Jul. 2009.
15. A. Khakifirooz and D. A. Antoniadis, "Transistor performance scaling: The role of virtual source velocity and its mobility dependence," in IEDM Te c h . D i g ., 2006, pp. 667-670.
16. Y. Liu, "III-V nanoscale transistors: Physics, modeling, and design," Ph.D. dissertation, Purdue Univ., West Lafayette, IN, 2010.