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Volumn 5, Issue 1, 2012, Pages

Electron mobility enhancement of extremely thin body In 0.7Ga 0.3As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrates by metal-oxide-semiconductor interface buffer layers

(14) Kim, Sanghyeon a Yokoyama, Masafumi a Taoka, Noriyuki a Iida, Ryo a Lee, Sunghoon a Nakane, Ryosho a Urabe, Yuji b Miyata, Noriyuki b Yasuda, Tetsuji b Yamada, Hisashi c Fukuhara, Noboru c Hata, Masahiko c Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c SUMITOMO CHEMICAL CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL THICKNESS; ENHANCEMENT FACTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR INTERFACES; MOBILITY ENHANCEMENT; MOS INTERFACE; MOSFETS; SCATTERING MECHANISMS; SI MOSFET; SI SUBSTRATES; THIN BODY;

BUFFER LAYERS; DIELECTRIC DEVICES; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING INDIUM; SILICON; SILICON WAFERS; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84861211821 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.5.014201 Document Type: Article

Times cited : (32)

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