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Volumn 98, Issue 24, 2011, Pages

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy

(14) Kim, Sanghyeon a Yokoyama, Masafumi a Taoka, Noriyuki a Iida, Ryo a Lee, Sunghoon a Nakane, Ryosho a Urabe, Yuji b Miyata, Noriyuki b Yasuda, Tetsuji b Yamada, Hisashi c Fukuhara, Noboru c Hata, Masahiko c Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c SUMITOMO CHEMICAL CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INP; METAL SOURCE/DRAIN; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METALLIC ALLOYS; MOSFETS; SELF-ALIGN; SELF-ALIGNED; SUBTHRESHOLD SWING;

CERIUM ALLOYS; DIELECTRIC DEVICES; ELECTRIC RESISTANCE; ION BEAMS; METALLIC COMPOUNDS; METALS; MOSFET DEVICES; TRANSISTORS;

ALLOYS;

EID: 79960601065 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3597228 Document Type: Article

Times cited : (27)

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