Comparisons of performance potentials of Si and InAs nanowire MOSFETs under ballistic transport

IEEE Transactions on Electron Devices

Volumn 59, Issue 1, 2012, Pages 206-211

  Takiguchi, Naoya ^a   Koba, Shunuske ^a   Tsuchiya, Hideaki ^a,b   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Ballistic transport; first principles calculation; high mobility semiconductors; nanowire transistors; power delay product (PDP); quantum capacitance

Indexed keywords

BALLISTIC TRANSPORTS; FIRST-PRINCIPLES CALCULATION; HIGH-MOBILITY SEMICONDUCTORS; NANOWIRE TRANSISTORS; POWER-DELAY PRODUCTS; QUANTUM CAPACITANCE;

CALCULATIONS; CAPACITANCE; GATES (TRANSISTOR); INDIUM ARSENIDE; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TRANSISTORS; TRANSPORT PROPERTIES;

BALLISTICS;

EID: 84855421083     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2172615     Document Type: Article

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