Orientational dependence in device performances of InAs and si nanowire MOSFETs under ballistic transport

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 117-122

  Shimoida, Kenta ^a   Yamada, Yoshihiro ^a   Tsuchiya, Hideaki ^a,b   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Ballistic transport; current drive; high mobility semiconductors; nanowire (NW) transistors; power delay product (PDP); quantum capacitance (QC); tight binding (TB) approach

Indexed keywords

BALLISTIC TRANSPORTS; CURRENT DRIVES; HIGH-MOBILITY SEMICONDUCTORS; NANOWIRE TRANSISTORS; POWER DELAY PRODUCT; QUANTUM CAPACITANCE; TIGHT-BINDING APPROACHES;

BALLISTICS; CAPACITANCE; MOSFET DEVICES; NANOWIRES; SILICON; TRANSPORT PROPERTIES;

INDIUM ARSENIDE;

EID: 84871760686     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2228199     Document Type: Article

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