AlN films deposited under various nitrogen concentrations by RF reactive sputtering

Journal of Crystal Growth

Volumn 254, Issue 1-2, 2003, Pages 46-54

  Cheng, H ^a,b   Sun, Y ^b   Zhang, J X ^b   Zhang, Y B ^a   Yuan, S ^b   Hing, P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Field emission scanning electron microscopy; A1. Fourier transform infrared; A1. Raman; A1. RF sputtering; A1. X ray diffraction; B1. AlN film

Indexed keywords

ALUMINUM NITRIDE; COMPRESSIVE STRESS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; MORPHOLOGY; PHONONS; SCANNING ELECTRON MICROSCOPY;

RADIOFREQUENCY REACTIVE SPUTTERING;

THIN FILMS;

EID: 0038285181     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01176-X     Document Type: Article

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