Dependence of N 2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 2057-2062

  Shukla, Gaurav ^a   Khare, Alika ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

Aluminum nitride (AlN); Pulsed laser deposition; Reactive pulse laser deposition; Thin films

Indexed keywords

ALUMINUM COATINGS; ALUMINUM NITRIDE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; III-V SEMICONDUCTORS; LASER ABLATION; PULSED LASER DEPOSITION; PULSED LASERS; SURFACE PROPERTIES; THIN FILMS;

ALN THIN FILMS; ALUMINUM NITRIDE (ALN); DEPOSITION TIME; FT-IR SPECTRUM; LOWER PRESSURES; PL SPECTRA; PULSED-LASER DEPOSITION TECHNIQUE; REACTIVE PULSE LASER DEPOSITION;

CRYSTAL STRUCTURE;

EID: 56949101659     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.190     Document Type: Article

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