Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 113-118

  Volkova, Anna ^a   Ivantsov, Vladimir ^a   Leung, Larry ^a  

^a TDI an Oxford Instruments   (United States)

Author keywords

A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

4G WIRELESS; A1. CRYSTAL STRUCTURE; A3. HYDRIDE VAPOR PHASE EPITAXY; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALN; ALN LAYERS; B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; DIFFERENTIAL INTERFERENCE CONTRAST; DISLOCATION DENSITIES; GROWTH CONDITIONS; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-POWER; HYDRIDE VAPOR PHASE EPITAXY; IN-PLANE; LATTICE PARAMETERS; MIS-ORIENTATION; MOBILE STATION; OFF-AXIS; RECIPROCAL SPACE MAPPING; RELAXED STATE; ROCKING CURVES; ROOT MEAN SQUARE ROUGHNESS; SEM; SIC SUBSTRATES; STEP BUNCHING; STRUCTURAL PERFECTION; SUBSTRATE PREPARATION; UNIT CELLS; WET-CHEMICAL ETCHING; XRD;

ALUMINUM; ALUMINUM NITRIDE; ASTATINE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH RESOLUTION ELECTRON MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SCREW DISLOCATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS; WET ETCHING; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78651090513     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.109     Document Type: Article

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