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Volumn 257, Issue 7, 2011, Pages 2415-2418
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Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
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Author keywords
Crystal morphology; GaN; MOCVD; Nonpolar
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Indexed keywords
ALUMINUM NITRIDE;
ATOMIC FORCE MICROSCOPY;
BUFFER LAYERS;
CRYSTALLOGRAPHY;
FILM GROWTH;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
MULTILAYER FILMS;
MULTILAYERS;
OPTICAL WAVEGUIDES;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
SURFACE MORPHOLOGY;
TEMPERATURE;
ALN BUFFER LAYERS;
BUFFER LAYER STRUCTURES;
CRYSTAL MORPHOLOGIES;
HIGH TEMPERATURE;
LOW TEMPERATURES;
MEAN ROUGHNESS;
NON-POLAR;
SAPPHIRE SUBSTRATES;
III-V SEMICONDUCTORS;
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EID: 79251594909
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2010.10.059 Document Type: Review |
Times cited : (30)
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References (13)
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