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Volumn 257, Issue 7, 2011, Pages 2415-2418

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

Author keywords

Crystal morphology; GaN; MOCVD; Nonpolar

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CRYSTALLOGRAPHY; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; MULTILAYER FILMS; MULTILAYERS; OPTICAL WAVEGUIDES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; TEMPERATURE;

EID: 79251594909     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.10.059     Document Type: Review
Times cited : (30)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.