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Applied Physics Letters

Volumn 96, Issue 23, 2010, Pages

Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films

(5) Seo, Hyungtak a Park, Chan Jun b Cho, Young Je b Kim, Young Bae c Choi, Duck Kyun b

a UNIVERSITY OF CALIFORNIA (United States)

b Hanyang University (South Korea)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BULK ELECTRONS; BULK MOBILITY; DEFECT STATE; ENERGY DEPTH; LOCALIZED DEFECTS; MOBILITY CHANGES; NATIVE DEFECT; SPECTROSCOPIC DETECTION; THERMAL STRUCTURE; X RAY PHOTOEMISSION SPECTROSCOPY; ZNO THIN FILM;

BIOLOGY; CONDUCTION BANDS; DEFECTS; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLIC FILMS; OPTICAL FILMS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

DEFECT DENSITY;

EID: 77953506833 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3424790 Document Type: Article

Times cited : (47)

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