Thermal evolution of band edge states in ZnO film as a function of annealing ambient atmosphere

Electrochemical and Solid-State Letters

Volumn 15, Issue 4, 2012, Pages

  Park, Hyun Woo ^a   Park, Jin Seong ^a   Lee, Ju Ho ^b   Chung, Kwun Bum ^a  

^a Dankook University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; ANNEALING TEMPERATURES; BAND EDGE STATE; PREFERRED ORIENTATIONS; SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS; THERMAL CHANGES; THERMAL EVOLUTION; ZNO FILMS;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; METALLIC FILMS; SPECTROSCOPIC ELLIPSOMETRY; VACUUM;

ANNEALING;

EID: 84863131409     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.005205esl     Document Type: Article

References (20)

1. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater., 4, 42 (2005). 10.1038/nmat1284 (Pubitemid 40021000)
2. Myung-Gil Kim, Mercouri G. Kanatzidis, Antonio Facchetti, and Tobin J. Marks, Nat. Mater., 10, 382 (2011). 10.1038/nmat3011
3. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, Adv. Mater., 17, 590 (2005). 10.1002/adma.200400368 (Pubitemid 40448713)
4. S.-H. Park, C.-S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.-I. Lee, K. Lee, M. S. Oh, and S. Im, Adv. Mater., 21, 678 (2009). 10.1002/adma.200801470
5. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes Jr., Appl. Phys. Lett., 82, 1117 (2003). 10.1063/1.1553997
6. Shigemi Kohiki, Mikihiko Nishitani, Takahiro Wada, and Takashi Hirao, Appl. Phys. Lett., 64, 2876 (1994). 10.1063/1.111401
7. M. Schmidt, M. Ellguth, and F. Schmidt, Phys. Status Solidi B, 247, 1220 (2010). 10.1002/pssb.200945534
8. . zgr, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doan, V. Avrutin, S.-J. Cho, and H. Morko, J. Appl. Phys., 98, 041301 (2005). 10.1063/1.1992666 (Pubitemid 41348664)
9. K. Jwayeon, K. Myung-chun, Y. Jaekeun, and P. Kyeongsoon, Curr. Appl. Phys., 10, S495 (2010). 10.1016/j.cap.2010.02.041
10. K. B. Chung, H. Seo, J. P. Long, and G. Lucovsky, Appl. Phys. Lett., 93, 182903 (2008). 10.1063/1.3005422
11. Anderson Janotti and Chris G. Van de Walle, Phys. Rev. B, 76, 165202 (2007). 10.1103/PhysRevB.76.165202
12. F. Oba, A. Togo, I. Tanaka, J. Paier, and G. Kresse, Phys. Rev. B, 77, 245202 (2008). 10.1103/PhysRevB.77.245202
13. D. E. Aspnes and A. A. Studna, Phys. Rev. B, 27, 985 (1983). 10.1103/PhysRevB.27.985
14. Hisashi Yoshikawa and Sadao Adachi, Jpn. J. Appl. Phys., 36, 6237 (1997) 10.1143/JJAP.36.6237
15. P. A. Cox, Transition Metal Oxides (Clarendon, Oxford, 1992).
16. Veeramuthu Vaithianathan and Byung-Teak Lee, Appl. Phys. Lett., 88, 112103 (2006). 10.1063/1.2186383
17. G. E. Jellison Jr. and F. A. Modine, Appl. Phys. Lett., 69, 371 (1996). 10.1063/1.118064
18. Hyungtak Seo, Chan-Jun Park, Young-Je Cho, Young-Bae Kim, and Duck-Kyun Choi, Appl. Phys. Lett., 96, 232101 (2010). 10.1063/1.3424790
19. T. Kamiya, K. Nomura, and H. Hosono, J. Disp. Tech., 5, 273 (2009). 10.1109/JDT.2009.2021582
20. K. B. Chung, J. P. Long, H. Seo, G. Lucovsky, and D. Nordlund, J. Appl. Phys., 106, 074102 (2009). 10.1063/1.3236679