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Journal of Physics D: Applied Physics

Volumn 45, Issue 41, 2012, Pages

Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor

(5) Ahn, Byung Du a Lim, Jun Hyung a Cho, Mann Ho b Park, Jin Seong c Chung, Kwun Bum c

a SAMSUNG Electronics (South Korea)

b Yonsei University (South Korea)

c Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; ANNEALING PROCESS; BAND ALIGNMENTS; CHEMICAL BONDING STATE; CONDUCTION BAND OFFSET; ELEMENTAL COMPOSITIONS; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTOR; THIN-FILM TRANSISTOR (TFTS); WATER VAPOUR;

CHEMICAL BONDS; ELECTRIC PROPERTIES; GALLIUM; THIN FILM TRANSISTORS; VAPORS; ZINC;

ANNEALING;

EID: 84866904150 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/41/415307 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.