The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 381-386

  Ay, I ^a   Tolunay, H ^a  

^a HACETTEPE UNIVERSITY   (Turkey)

Author keywords

a Si:H; I V characteristics; Ohmic contact; Schottky diodes

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

BARRIER HEIGHT; METAL CONTACTS; RICHARDSON CONSTANT; SATURATION CURRENT;

OHMIC CONTACTS;

EID: 33947699962     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.12.001     Document Type: Article

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