Barrier inhomogeneity and electrical properties of InN Nanodots/Si heterojunction diodes

Journal of Nanomaterials

Volumn 2011, Issue , 2011, Pages

  Kumar, Mahesh ^a,b   Roul, Basanta ^a,b   Bhat, Thirumaleshwara N ^a   Rajpalke, Mohana K ^a   Kalghatgi, A T ^b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; EFFECTIVE AREA; ELECTRICAL TRANSPORT; GAUSSIAN STATISTICS; HETEROJUNCTION DIODES; IDEALITY FACTORS; INDIUM NITRIDE; INHOMOGENEITIES; NANODOTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SI SUBSTRATES; SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENT; THEORETICAL VALUES;

ELECTRIC PROPERTIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84855604160     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2011/189731     Document Type: Article

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