Electrical characterization of a-Si:H(n)/c-Si(p) structure

Journal of Alloys and Compounds

Volumn 509, Issue 39, 2011, Pages 9394-9398

  Sertap Kavasoglu, A ^a   Birgi, Ozcan ^a   Kavasoglu, Nese ^a   Oylumluoglu, Gorkem ^a   Osman Kodolbas, A ^b   Kangi, Rifat ^b   Yilmaz, Okan ^b  

^a MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

^b NATIONAL METROLOGY INSTITUTE   (Turkey)

Author keywords

Current voltage measurements; Interface states; Schottky barrier diodes; Series resistance

Indexed keywords

A-SI:H; CARRIER INJECTION; CHARACTERISTIC TEMPERATURE; CRYSTALLINE SILICONS; CURRENT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DC CURRENT; DEVICE STRUCTURES; ELECTRICAL CHARACTERIZATION; FORWARD BIAS; GENERATION-RECOMBINATION; HETEROJUNCTION DIODES; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IDEALITY FACTORS; INTERFACE STATE DENSITY; INTERFACE STATES; JUNCTION INTERFACES; P-TYPE; SCHOTTKY BARRIERS; SCHOTTKY JUNCTIONS; SERIES RESISTANCES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THERMIONIC EMISSION THEORY; TUNNELING ENERGY;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; HYDROGENATION; INTERFACES (MATERIALS); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; THERMIONIC EMISSION;

AMORPHOUS SILICON;

EID: 80052037933     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.07.044     Document Type: Article

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