Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering

Journal of Alloys and Compounds

Volumn 509, Issue 27, 2011, Pages 7317-7323

  Gülnahar, Murat ^a,b   Efeolu, Hasan ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b ERZINCAN UNIVERSITY   (Turkey)

Author keywords

GaTe; Gaussian distribution; Layered crystal; Richardson constant; Schottky barrier anomalies; Schottky diode

Indexed keywords

GATE; GAUSSIANS; LAYERED CRYSTALS; RICHARDSON CONSTANT; SCHOTTKY BARRIERS; SCHOTTKY DIODES;

DIODES; GAUSSIAN DISTRIBUTION; MOLYBDENUM; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

FABRICATION;

EID: 79957977530     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.03.170     Document Type: Article

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