High-mobility ZnO nanorod field-effect transistors by self-alignment and electrolyte-gating

ACS Applied Materials and Interfaces

Volumn 5, Issue 5, 2013, Pages 1656-1662

  Thiemann, Stefan ^a   Gruber, Mathias ^a   Lokteva, Irina ^a   Hirschmann, Johannes ^a   Halik, Marcus ^a   Zaumseil, Jana ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

alignment; electrolyte gating; field effect transistors; ionic liquid; nanorods; zinc oxide

Indexed keywords

DEGREE OF ALIGNMENTS; FIELD-EFFECT MOBILITIES; FLEXIBLE POLYMER SUBSTRATES; HIGH ELECTRON MOBILITY; LOW OPERATING VOLTAGE; LOW PROCESS TEMPERATURE; SOLVENT EVAPORATION; SOLVENT EVAPORATION TECHNIQUES;

ELECTROLYTES; ELECTRON MOBILITY; EVAPORATION; FIELD EFFECT TRANSISTORS; IONIC LIQUIDS; NANORODS; PHASE TRANSITIONS; ZINC OXIDE;

ALIGNMENT;

EID: 84875033573     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3026739     Document Type: Article

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