Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle-based thin-film transistors

ACS Applied Materials and Interfaces

Volumn 4, Issue 3, 2012, Pages 1693-1696

  Faber, Hendrik ^a   Hirschmann, Johannes ^a   Klaumünzer, Martin ^a   Braunschweig, Björn ^a   Peukert, Wolfgang ^a   Halik, Marcus ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

nanoparticles; plasma treatment; thin film transistors; zinc oxide

Indexed keywords

DEVICE PERFORMANCE; EMISSION INTENSITY; INITIAL VALUES; MAXIMUM DRAIN CURRENT; OXYGEN PLASMA TREATMENTS; PLASMA TREATMENT; SEMICONDUCTING LAYER; THIN FILM TRANSISTORS (TFT); ZINC OXIDE (ZNO); ZINC OXIDE NANOPARTICLES;

DEFECTS; NANOPARTICLES; OXYGEN; PHOTOLUMINESCENCE SPECTROSCOPY; THIN FILM TRANSISTORS; ZINC OXIDE;

PLASMA APPLICATIONS;

EID: 84859116584     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am2018223     Document Type: Article

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