Ambipolar and unipolar PbSe nanowire field-effect transistors

ACS Nano

Volumn 5, Issue 4, 2011, Pages 3230-3236

  Kim, David K ^a   Vemulkar, Tarun R ^a   Oh, Soong Ju ^a   Koh, Weon Kyu ^b   Murray, Christopher B ^a,b   Kagan, Cherie R ^a,b  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

colloidal nanowires; electric field directed assembly; inverters; nanocrystals; transistors

Indexed keywords

AMBIPOLAR; AMBIPOLAR BEHAVIOR; AMBIPOLAR FET; CHARGE TRANSFER DOPING; COLLOIDAL NANOWIRES; CONTACT REGIONS; DIRECTED ASSEMBLY; DOPING AND DE-DOPING; ELECTRIC-FIELD DIRECTED ASSEMBLY; ELECTRICAL MEASUREMENT; HOLE INJECTION; HYDRAZINE CONCENTRATION; INVERTERS; LOW BAND GAP; LOW VACUUM; METAL SEMICONDUCTOR INTERFACE; MODERATE CONCENTRATION; P-TYPE; SINGLE-CRYSTALLINE; SURFACE MODIFICATION; UV-OZONE; WET-CHEMICAL METHOD;

CARRIER CONCENTRATION; CHARGE TRANSFER; ELECTRIC WIRE; ENERGY GAP; HYDRAZINE; ION EXCHANGE; MASS TRANSFER; MESFET DEVICES; NANOCRYSTALS; NANOWIRES; OZONE; PHOSPHORUS; SEMICONDUCTOR DOPING;

FIELD EFFECT TRANSISTORS;

EID: 79955408872     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200348p     Document Type: Article

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