High carrier densities achieved at low voltages in ambipolar PbSe nanocrystal thin-film transistors

Nano Letters

Volumn 9, Issue 11, 2009, Pages 3848-3852

  Kang, Moon Sung ^a   Lee, Jiyoul ^a   Norris, David J ^a   Daniel Frisbie, C ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; CARRIER DENSITY; COLLOIDAL SEMICONDUCTOR NANOCRYSTALS; ELECTRICALLY PUMPED; ELECTRONS AND HOLES; GATE DIELECTRIC LAYERS; HIGH CARRIER MOBILITY; HOLE ACCUMULATION; HOLE DENSITIES; LIGHT-EMITTING TRANSISTORS; LOW VOLTAGES; LOW-VOLTAGE; NANOCRYSTAL LASERS; OPERATION VOLTAGE; PBSE NANOCRYSTALS; TUNABLE EMISSIONS;

CARRIER CONCENTRATION; ELECTRONS; GATE DIELECTRICS; GATES (TRANSISTOR); NANOCRYSTALS; PUMPING (LASER); SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

CARRIER MOBILITY;

EID: 72849118300     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl902062x     Document Type: Article

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