Low voltage, hysteresis free, and high mobility transistors from All-inorganic colloidal nanocrystals

Nano Letters

Volumn 12, Issue 4, 2012, Pages 1813-1820

  Chung, Dae Sung ^a   Lee, Jong Soo ^a   Huang, Jing ^a   Nag, Angshuman ^a   Ithurria, Sandrine ^a   Talapin, Dmitri V ^a,b  

^a UNIVERSITY OF CHICAGO   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

charge transport; electron mobility; field effect transistor; inorganic ligands; Semiconductor nanocrystals

Indexed keywords

CAPPING LIGANDS; CDSE NANOCRYSTALS; COLLOIDAL NANOCRYSTALS; FIELD-EFFECT DEVICES; HIGH ELECTRON MOBILITY; HIGH MOBILITY; HYSTERESIS BEHAVIOR; LOW VOLTAGES; OPERATION VOLTAGE; SEMICONDUCTOR NANOCRYSTALS; SOLUTION-PROCESSED; SWITCHING SPEED; TRANSISTOR OPERATION; TRAPPING MECHANISMS;

CADMIUM COMPOUNDS; CHARGE TRANSFER; DIELECTRIC MATERIALS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HYSTERESIS; LIGANDS; RAPID THERMAL ANNEALING; TRANSISTORS;

NANOCRYSTALS;

EID: 84859702172     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203949n     Document Type: Article

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