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Applied Physics A: Materials Science and Processing

Volumn 111, Issue 1, 2013, Pages 303-308

Temperature-dependent resistive switching behavior in the structure of Au/Nb:SrTiO3/Ti

(9) Shen, J X a Qian, H Q a Wang, G F a An, Y H a Li, P G a Zhang, Y a Wang, S L a Chen, B Y a Tang, W H b

a ZHEJIANG SCI TECH UNIVERSITY (China)

b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; HIGH-RESISTANCE STATE; RESISTIVE SWITCHING BEHAVIORS; RF-MAGNETRON SPUTTERING; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTOR BEHAVIOR; SPACE-CHARGE-LIMITED; TEMPERATURE DEPENDENT;

ELECTRIC PROPERTIES; OHMIC CONTACTS; STRONTIUM TITANATES; TRANSPORT PROPERTIES;

SWITCHING SYSTEMS;

EID: 84874947924 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-012-7541-y Document Type: Article

Times cited : (12)

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