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Volumn 103, Issue 5, 2008, Pages

Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; PERMITTIVITY; SINGLE CRYSTALS; SWITCHING;

EID: 40849145743     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2872707     Document Type: Article
Times cited : (115)

References (21)
  • 13
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    • JVTBD9 0734-211X 10.1116/1.591472.
    • J. Robertson, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.591472 18, 1785 (2000).
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785
    • Robertson, J.1
  • 17
    • 0032613386 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.370539.
    • T. Shimizu and H. Okushi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370539 85, 7244 (1999).
    • (1999) J. Appl. Phys. , vol.85 , pp. 7244
    • Shimizu, T.1    Okushi, H.2
  • 20
    • 40849095878 scopus 로고    scopus 로고
    • Physics of Semiconductor Devices, 3rd ed. (Wiley, Hoboken).
    • S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, Hoboken, 2007).
    • (2007)
    • Sze, S.M.1    Ng, K.K.2
  • 21
    • 21744446559 scopus 로고    scopus 로고
    • JPCBFK 1089-5647.
    • Q. Fu and T. Wagner, J. Phys. Chem. B JPCBFK 1089-5647 109, 11697 (2005).
    • (2005) J. Phys. Chem. B , vol.109 , pp. 11697
    • Fu, Q.1    Wagner, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.