Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Applied Physics Letters

Volumn 102, Issue 8, 2013, Pages

  Raja, Jayapal ^a   Jang, Kyungsoo ^a   Balaji, Nagarajan ^a   Choi, Woojin ^a   Thuy Trinh, Thanh ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUSINGAZNO (A-IGZO); C. THIN FILM TRANSISTOR (TFT); DEVICE STABILITY; HUMP FORMATIONS; NITROGEN-DOPING; SUB-THRESHOLD SWING(SS); TEMPERATURE STABILITY; TRANSFER CURVES;

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

DOPING (ADDITIVES);

EID: 84874841148     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4793535     Document Type: Article

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