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Applied Physics Letters

Volumn 100, Issue 1, 2012, Pages

Effects of nitrogen doping on device characteristics of InSnO thin film transistor

(2) Eun Kim, Chang a Yun, Ilgu a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CRYSTALLINITIES; DEPOSITION PROCESS; DEVICE CHARACTERISTICS; FIELD-EFFECT MOBILITIES; INTERFACE TRAP STATE; NITROGEN-DOPING; ON/OFF CURRENT RATIO; SUBTHRESHOLD SWING;

NITROGEN; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84855564230 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3673556 Document Type: Article

Times cited : (30)

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