Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

Semiconductors

Volumn 47, Issue 3, 2013, Pages 427-432

  Shaleev, M V ^a   Novikov, A V ^a   Yurasov, D V ^a   Hartmann, J M ^b   Kuznetsov, O A ^c   Lobanov, D N ^a   Krasilnik, Z F ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b CEA LETI   (France)

^c LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84874816541     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378261303024X     Document Type: Article

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