Special features of the formation of Ge(Si) islands on the relaxed Si 1-xGex/Si(001) buffer layers

Semiconductors

Volumn 40, Issue 2, 2006, Pages 229-233

  Vostokov, N V ^a   Drozdov, Yu N ^a   Krasil'nik, Z F ^a   Kuznetsov, O A ^b   Lobanov, D N ^a   Novikov, A V ^a   Shaleev, M V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644996287     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606020217     Document Type: Article

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