Influence of elastic strains in sublayers on the critical thickness of the Stranski-krastanow transition for the GeSi/Si(001) system

Journal of Surface Investigation

Volumn 3, Issue 4, 2009, Pages 548-553

  Drozdov, Yu N ^a   Lobanov, D N ^a   Nikiforov, A I ^b   Novikov, A V ^a   Ul'yanov, V V ^b   Yurasov, D V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350069732     PISSN: 10274510     EISSN: 18197094     Source Type: Journal    
DOI: 10.1134/S1027451009040119     Document Type: Article

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