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Volumn 95, Issue 15, 2009, Pages

Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers

(4) Yurasov, D V a Drozdov, Yu N a Shaleev, M V a Novikov, A V a

a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; DECAY LENGTH; HETEROSTRUCTURES; SI LAYER; SIGE LAYERS; SIGE/SI; STRAINED LAYERS; STRAINED SIGE; THREE-DIMENSIONAL GROWTH; TWO-DIMENSIONAL GROWTH;

EPITAXIAL GROWTH; GERMANIUM; SILICON ALLOYS; TWO DIMENSIONAL;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 70350074347 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3244202 Document Type: Article

Times cited : (12)

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