Hall mobility of narrow Si0.2Ge0.8-Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

Applied Physics Letters

Volumn 84, Issue 15, 2004, Pages 2829-2831

  Tsujino, S ^a   Falub, C V ^a   Muller E ^a   Scheinert, M ^a   Diehl, L ^a   Gennser, U ^b   Fromherz, T ^c   Borak, A ^a   Sigg, H ^a   Grutzmacher D ^a   Campidelli, Y ^d   Kermarrec, O ^d   Bensahel, D ^d  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b UNIV PARIS SUD   (France)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; GROWTH KINETICS; HALL EFFECT; LASERS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NANOTECHNOLOGY; SCATTERING; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE CHARGE; MOBILITY-LIMITING MECHANISMS; QUANTUM CASCADES (QC); STRAIN FLUCTUATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2342612928     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695102     Document Type: Article

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