Improved hole mobilities and thermal stability in a strained-Si strained- Si 1- yGe ystrained-Si heterostructure grown on a relaxed Si 1- xGe x buffer

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Gupta, Saurabh ^a   Lee, Minjoo L ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; SECONDARY ION MASS SPECTROMETRY (SIMS); TRILAYER HETEROSTRUCTURES; WAVEFUNCTION TUNNELING;

ANNEALING; BAND STRUCTURE; CONCENTRATION (PROCESS); DIFFUSION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 20844445105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923195     Document Type: Article

References (14)

1. G. Hock, E. Kohn, C. Rosenblad, H. von Kanel, H.-J. Herzog, and U. Konig, Appl. Phys. Lett. 76, 3920 (2000).
2. M. L. Lee, Z.-Y. Cheng, C. W. Leitz, A. J. Pitera, T. A. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, Appl. Phys. Lett. 79, 3344 (2001).
3. C. W. Leitz, M. T. Currie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. 79, 4246 (2001).
4. C. K. Maiti, L. K. Bera, S. S. Dey, D. K. Nayak, and N. B. Chakrabarti, Solid-State Electron. 41, 1863 (1997).
5. K. Rim, J. Welser, J. L. Hoyt, and J. F. Gibbons, Technical Digest-International Electron Devices Meeting (Washington, D.C., 1995), p. 517.
6. H. Shang, J. O. Chu, X. Wang, P. M. Mooney, K. Lee, J. Ott, K. Rim, K. Chan, K. Guarini, and M. Ieong, Digest of Technical Papers, Symposium on VLSI Technology (Honolulu, Hawaii, 2004, p. 204.
7. S. Gupta, M. L. Lee, G. Taraschi, and E. A. Fitzgerald, 2005 (unpublished).
8. J.-W. Jung, S. F. Yu, O. O. Olubuyide, J. L. Hoyt, D. A. Antoniadis, M. L. Lee, and E. A. Fitzgerald, Appl. Phys. Lett. 84, 3319 (2004).
9. D. B. Aubertine, M. A. Mander, N. Ozguven, A. F. Marshall, P. C. McIntyre, J. O. Chu, and P. M. Mooney, J. Appl. Phys. 92, 5027 (2002).
10. H. Zhu, The Electrochemical Society Proceedings, 206th Meeting, SiGe: Materials, Processing and Devices 2004-7 (Honolulu, Hawaii, 2004), p. 923.
11. M. L. Lee and E. A. Fitzgerald, J. Appl. Phys. 95, 1550 (2004).
12. M. L. Lee and E. A. Fitzgerald, J. Vac. Sci. Technol. B 22, 158 (2004).
13. M. Armstrong, PhD Thesis, Massachusetts Institute of Technology, 1999.
14. C. W. Leitz, M. T. Currie, A. Y. Kim, J. Lai, E. Robbins, E. A. Fitzgerald, and M. T. Bulsara, J. Appl. Phys. 90, 2730 (2001).