High-quality metamorphic compositionally graded InGaAs buffers

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 250-257

  Lee, Kenneth E ^a   Fitzgerald, Eugene A ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Metamorphic graded buffers; B1. InGaAs; B2. Semiconducting III V materials

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; AT-WAVELENGTH; GAAS; GRADED BUFFER; GROWTH PARAMETERS; HIGH QUALITY; LINEAR GRADING; MOCVD; MOCVD REACTOR; OPTICAL EMITTER; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM WELL; SEMI CONDUCTING III-V MATERIALS; SEPARATE CONFINEMENT HETEROSTRUCTURES; STRAIN-RELAXED; THREADING DISLOCATION DENSITIES; VIRTUAL SUBSTRATES; WAVELENGTH REGIONS;

COMMUNICATION CHANNELS (INFORMATION THEORY); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; TIME DIVISION MULTIPLEXING;

GALLIUM ALLOYS;

EID: 71649096778     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.041     Document Type: Article

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