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Volumn 44, Issue 4, 2010, Pages 519-524

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

(4) Drozdov, Yu N a Novikov, A V a Shaleev, M V a Yurasov, D V a

a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77951727902 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/S1063782610040196 Document Type: Article

Times cited : (3)

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