Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Urakawa, Satoshi ^a   Tomai, Shigekazu ^b   Ueoka, Yoshihiro ^a   Yamazaki, Haruka ^a   Kasami, Masashi ^b   Yano, Koki ^b   Wang, Dapeng ^c   Furuta, Mamoru ^c   Horita, Masahiro ^a,d   Ishikawa, Yasuaki ^a,d   Uraoka, Yukiharu ^a,d  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b IDEMITSU KOSAN CO LTD   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; BIAS STRESS; DEGRADATION MECHANISM; DRAIN REGION; DRAIN VOLTAGE; HOT CARRIER EFFECT; OXIDE THINFILM TRANSISTORS (TFTS); STRESS TIME; THERMAL DISTRIBUTIONS;

DEGRADATION; ELECTRIC PROPERTIES; HOT CARRIERS; INFRARED IMAGING; JOULE HEATING; SEMICONDUCTING ORGANIC COMPOUNDS; THERMOANALYSIS;

THIN FILM TRANSISTORS;

EID: 84874039544     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790619     Document Type: Article

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