Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature

Solid-State Electronics

Volumn 72, Issue , 2012, Pages 88-92

  Lee, Sueng Min ^a   Yu, Chong Gun ^a   Cho, Won Ju ^b   Park, Jong Tae ^a  

^a SolarLight Ltd   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

Hot carrier degradation; InGaZnO thin film transistor; Light illumination

Indexed keywords

CARRIER INDUCED; CHANNEL CURRENTS; CHANNEL REGION; CONDUCTION CURRENT; DEVICE DEGRADATION; ELEVATED TEMPERATURE; EXPERIMENTAL INVESTIGATIONS; GATE DIELECTRIC LAYERS; HOT CARRIER DEGRADATION; HOT CARRIER STRESS; LIGHT ILLUMINATION; LIGHT INTENSITY; NEGATIVE SHIFT; PHOTOGENERATED ELECTRONS; STRESS CONDITION; STRESS TEMPERATURE; STRESS TIME; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENCE; TRANSFER CURVES;

GATE DIELECTRICS; HOT CARRIERS; THIN FILM TRANSISTORS; THIN FILMS;

DEGRADATION;

EID: 84862778380     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.02.010     Document Type: Article

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