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Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Volumn , Issue , 2012, Pages 159-162

Influence of active layer thickness on performance and reliability of InSnZnO thin-film transistors

(9) Wang, Dapeng a Li, Chaoyang a Furuta, Mamoru a Tomai, Shigekazu b Sunagawa, Misa b Nishimura, Mami b Kawashima, Emi b Kasami, Masashi b Yano, Koki b

a KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

b IDEMITSU KOSAN CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AREA DENSITY; CHANNEL LAYERS; CHANNEL THICKNESS; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; NEGATIVE GATE; POSITIVE GATE BIAS; SUBTHRESHOLD SWING; THICKNESS DEPENDENCE; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS FILMS; ELECTRIC FIELD EFFECTS; FLAT PANEL DISPLAYS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 84867918375 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (16)

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