Investigating the degradation behavior under hot carrier stress for InGaZnO TFT with symmetric and asymmetric structure

ECS Transactions

Volumn 45, Issue 7, 2012, Pages 119-131

  Tsai, Ming Yen ^a   Chang, Ting Chang ^a   Chu, Ann Kuo ^a   Chen, Te Chih ^a   Hsieh, Tien Yu ^a   Che, Yu Te ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ENERGY GAP; HOT CARRIERS; II-VI SEMICONDUCTORS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ASYMMETRIC STRUCTURES; CHANNEL HOT ELECTRON; DEGRADATION BEHAVIOR; DIFFERENT MECHANISMS; GATE TO SOURCE CAPACITANCES; GATE-TO-DRAIN CAPACITANCE; INDIUM GALLIUM ZINC OXIDES; SOURCE/DRAIN STRUCTURES;

GALLIUM COMPOUNDS;

EID: 84869055460     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3701532     Document Type: Conference Paper

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