High-mobility oxide TFT for circuit integration of AMOLEDs

Journal of the Society for Information Display

Volumn 19, Issue 12, 2011, Pages 867-872

  Fukumoto, Eri ^a   Arai, Toshiaki ^a   Morosawa, Narihiro ^a   Tokunaga, Kazuhiko ^a   Terai, Yasuhiro ^a   Fujimori, Takashige ^a   Sasaoka, Tatsuya ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Circuit integration; ITZO; OLED; Oxide TFT; Threshold voltage

Indexed keywords

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODES; AMOLEDS; CHANNEL MATERIALS; CIRCUIT INTEGRATION; HIGH MOBILITY; HIGH-RELIABILITY; IN-SN-ZN-O; ITZO; OLED; STRESS CONDITION; THIN FILM TRANSISTORS (TFT); THRESHOLD VOLTAGE SHIFTS;

DISPLAY DEVICES; INTEGRATION; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TIN;

LIGHT EMITTING DIODES;

EID: 84858676946     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID19.12.867     Document Type: Article

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