Self-heating enhanced charge trapping effect for InGaZnO thin film transistor

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Chen, Te Chih ^a   Chang, Ting Chang ^a,b   Hsieh, Tien Yu ^a   Tsai, Ming Yen ^a   Chen, Yu Te ^a   Chung, Yi Chen ^c   Ting, Hung Che ^c   Chen, Chia Yu ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING EFFECT; DEGRADATION BEHAVIOR; DEGRADATION MECHANISM; ELECTRON TRAPPING; GATE-BIAS STRESS; ON-CURRENTS; SATURATION MEASUREMENT; SELF-HEATING; SHIFT-AND; TRAP STATE; VERTICAL ELECTRICAL FIELDS;

ELECTRON TRAPS; THIN FILM TRANSISTORS;

DEGRADATION;

EID: 84864426894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733617     Document Type: Article

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