Analysis of drain field and hot carrier stability of poly-Si thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1801-1808

  Ayres, J Richard ^a   Brotherton, Stan D ^a   McCulloch, David J ^a   Trainor, Michael J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Drain field; GOLDD; Hot carrier stability; LDD; Poly si TFT

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

GATE OVERLAPPED LIGHTLY DOPED DRAIN (GOLDD); HOT CARRIER STABILITY;

THIN FILM TRANSISTORS;

EID: 0032050442     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1801     Document Type: Article

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