Effect of an in layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes

Superlattices and Microstructures

Volumn 56, Issue , 2013, Pages 77-85

  Yum, Woong Sun ^a   Lee, Chang Hyeong ^a   Jin, Sungho ^b   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ag reflector; GaN; In middle layer; LED; Light output power

Indexed keywords

AG CONTACTS; FORWARD VOLTAGE; GAN; GAN-BASED LIGHT-EMITTING DIODES; INCREASING TEMPERATURES; INJECTION CURRENTS; LIGHT OUTPUT POWER; MIDDLE LAYER; OUTPUT POWER; SPECIFIC CONTACT RESISTANCES; THERMAL AND ELECTRICAL PROPERTIES; VERTICAL LIGHT-EMITTING DIODES;

AGGLOMERATION; ANNEALING; ELECTRIC ARCS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; REFLECTION; SILVER;

LIGHT EMITTING DIODES;

EID: 84873636301     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.12.014     Document Type: Article

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