Developing nitride-based blue LEDs on SiC substrates

JOM

Volumn 49, Issue 9, 1997, Pages 24-26

  Edmond, John ^a,b   Lagaly, Jeffrey ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c UNIVERSITY OF CINCINNATI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MAGNESIUM; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SILICON CARBIDE; SUBSTRATES;

GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0031235984     PISSN: 10474838     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02914346     Document Type: Article

References (3)

1. S. Nakamura, "InGaN Light-Emitting Diodes with Quantum-Well Structures," MRS Symp. Proc. Gallium Nitride and Related Materials, vol. 395, ed. F. Ponce et al. (Pittsburgh, PA: MRS, 1996), pp. 879-887.
2. M. Koikeet al., "Light-Emitting Devices Based on GaN and Related Compound Semiconductors," MRS Symp, Proc. Gallium Nitride and Related Materials, vol. 395, ed. F. Ponce et al. (Pittsburgh, PA: MRS, 1996), pp. 889-895.
3. H. Amano et al., "Growth and Luminescence Properties of Mg-Doped GaN Prepared by MOVPE," J. Electrochem. Soc., 137 (1990), pp. 1639-1641.