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Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

Ohmic and degradation mechanisms of Ag contacts on p-type GaN

(4) Song, June O a Kwak, Joon Seop b Park, Yongjo b Seong, Tae Yeon a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; ENERGY DISPERSIVE SPECTROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SILVER; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFERED OXIDE ETCH (BOE); DEGRADATION MECHANISMS; ELECTRON BEAM EVAPORATION; TRANSPARENT CONDUCTING OXIDE (TCO);

GALLIUM NITRIDE;

EID: 21044445349 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1863441 Document Type: Article

Times cited : (130)

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