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Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

Highly reflective Ag/La bilayer ohmic contacts to p-type GaN

(5) Chen, I Chen a Chen, Yi Dar a Hsieh, Chih Chien a Kuo, Cheng Huang b Chang, Li Chuan a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; BI-LAYER; CONTACT RESISTIVITIES; METAL CONTACTS; OXYGEN ATMOSPHERE; P-TYPE GAN; SPECIFIC CONTACT RESISTIVITY; THERMAL STABILITY; THERMAL-ANNEALING;

ANNEALING; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; OXYGEN;

REFLECTION;

EID: 79551610436 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3533673 Document Type: Article

Times cited : (21)

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