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Volumn 44, Issue 11, 2005, Pages 7910-7912
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Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
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Author keywords
GaN LEDs; Large area light emitting diode (LED); Laser lift off (LLO); Wafer bonding
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Indexed keywords
ELECTRIC CURRENTS;
GALLIUM NITRIDE;
INDIUM COMPOUNDS;
LASER PULSES;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
OPTICAL PROPERTIES;
GAN LEDS;
LASER LIFT-OFF (LLO);
WAFER BONDING;
ELECTRODES;
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EID: 31544478788
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.44.7910 Document Type: Article |
Times cited : (22)
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References (13)
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