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Volumn 44, Issue 11, 2005, Pages 7910-7912

Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off

Author keywords

GaN LEDs; Large area light emitting diode (LED); Laser lift off (LLO); Wafer bonding

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; INDIUM COMPOUNDS; LASER PULSES; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES;

EID: 31544478788     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7910     Document Type: Article
Times cited : (22)

References (13)
  • 11
    • 0042099114 scopus 로고    scopus 로고
    • Cambridge University Press, Cambridge
    • E. F. Schubert: Light Emitting Diodes (Cambridge University Press, Cambridge, 2003) p. 126.
    • (2003) Light Emitting Diodes , pp. 126
    • Schubert, E.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.