Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode

Optics Express

Volumn 20, Issue 17, 2012, Pages 19194-19199

  Yum, Woong Sun ^a   Jeon, Joon Woo ^a   Sung, Jun Suk ^a   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; REFLECTION; SILVER; ZINC; ZINC OXIDE;

BLUE LEDS; FORWARD VOLTAGE; HIGH-POWER; INJECTION CURRENTS; MIDDLE LAYER; OHMIC REFLECTORS; OUTPUT POWER; SPECIFIC CONTACT RESISTANCES; VERTICAL LIGHT-EMITTING DIODES; ZNO;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE; SILVER; ZINC;

ARTICLE; AUTOMATED PATTERN RECOGNITION; CHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; ILLUMINATION; IMPEDANCE; INSTRUMENTATION; METHODOLOGY; OPTICAL INSTRUMENTATION; SEMICONDUCTOR;

ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LENSES; LIGHTING; PATTERN RECOGNITION, AUTOMATED; SEMICONDUCTORS; SILVER; ZINC;

EID: 84865595010     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.019194     Document Type: Article

References (20)

1. W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, "Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off," Appl. Phys. Lett. 75(10), 1360-1362 (1999).
2. S. Y. Lee, K. K. Choi, H.-H. Jeong, H. S. Choi, T.-H. Oh, J.-O. Song, and T.-Y. Seong, "Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system," Semicond. Sci. Technol. 24(9), 092001 (2009).
3. M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, "Optical patterning of GaN films," Appl. Phys. Lett. 69(12), 1749-1751 (1996).
4. J.-T. Chu, C.-C. Kao, H.-W. Huang, W.-D. Liang, C.-F. Chu, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, "Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off," Jpn. J. Appl. Phys. 44(11), 7910-7912 (2005).
5. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, "High performance thin-film flip-chip InGaN-GaN light-emitting diodes," Appl. Phys. Lett. 89(7), 071109 (2006).
6. H. W. Jang, S. W. Ryu, H. K. Yu, S. Lee, and J. L. Lee, "The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes," Nanotechnology 21(2), 025203 (2010).
7. H. W. Jang and J.-L. Lee, "Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN," Appl. Phys. Lett. 85(24), 5920-5922 (2004).
8. D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, and H. Liu, "Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag," Appl. Phys. Lett. 83(2), 311-313 (2003).
9. J.-O. Song, D.-S. Leem, J. S. Kwak, O. H. Nam, Y. Park, and T.-Y. Seong, "Low-resistance and highlyreflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes," Appl. Phys. Lett. 83(24), 4990-4992 (2003).
10. J.-O. Song, J.-S. Kwak, and T.-Y. Seong, "Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes," Appl. Phys. Lett. 86(6), 062103 (2005).
11. S.-Y. Jung, Y.-H. Kim, Y. S. Kong, and T.-Y. Seong, "Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer," Superlattices Microstruct. 46(4), 578-584 (2009).
12. I.-C. Chen, Y.-D. Chen, C.-C. Hsieh, C.-H. Kuo, and L.-C. Chang, "Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN," J. Electrochem. Soc. 158(3), H285-H288 (2011).
13. J. H. Son, G. H. Jung, and J.-L. Lee, "Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer," Opt. Lett. 33(24), 2907-2909 (2008).
14. J.-O. Song, J. S. Kwak, Y. Park, and T.-Y. Seong, "Ohmic and degradation mechanisms of Ag contacts on p- type GaN," Appl. Phys. Lett. 86(6), 062104 (2005).
15. K. M. Tracy, P. J. Hartlieb, S. Einfeldt, R. F. Davis, E. H. Hurt, and R. J. Nemanich, "Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag," J. Appl. Phys. 94(6), 3939-3948 (2003).
16. T. B. Massalski, H. Okamoto, P. R. Subramanian, and L. Kacprzak, Binary Alloy Phase Diagrams, 2nd ed. (ASM International, Materials Park, Oh, 117, 1990).
17. V. M. Bermudez, D. D. Koleske, and A. E. Wickenden, "The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation," Appl. Surf. Sci. 126(1-2), 69-82 (1998).
18. J. H. Son, G. H. Jung, and J.-L. Lee, "Enhancement of light reflectance and thermal stability in Ag-Cu alloy contacts on p-type GaN," Appl. Phys. Lett. 93(1), 012102 (2008).
19. J.-P. Crocombette, H. de Monestrol, and F. Willaime, "Oxygen and vacancies in silver: A density-functional study in the local density and generalized gradient approximations," Phys. Rev. B 66(2), 024114 (2002).
20. Y. H. Song, J. H. Son, G. H. Jung, and J.-L. Lee, "Effects of Mg additive on inhibition of Ag agglomeration in Ag-based ohmic contacts on p-GaN," Electrochem. Solid-State Lett. 13(6), H173-H175 (2010).