1.54 μm photoluminescence emission and oxygen vacancy as sensitizer in Er-doped HfO2 films

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Wang, Junzhuan ^a   Xia, Yan ^a   Shi, Yi ^a   Shi, Zhuoqiong ^a   Pu, Lin ^a   Zhang, Rong ^a   Zheng, Youdou ^a   Tao, Zhensheng ^b   Lu, Fang ^b  

^a NANJING UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY TRANSFER; HAFNIUM COMPOUNDS; ION IMPLANTATION; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; OXYGEN VACANCIES; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

BAND EMISSION; BROAD BAND EXCITATION; INTEGRATED OPTOELECTRONIC DEVICE;

THIN FILMS;

EID: 36049000504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2806188     Document Type: Article

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